Influence of Zn Diffusion on Bandwidth and Extinction in MQW Electroabsorption Modulators Buried with Semi-Insulating In
A comprehensive analysis of multi-quantum-well electroabsorption modulators buried with semi-insulating (SI)-InP is presented. We quantitatively demonstrate that suppression of Zn diffusion into the burying and optical core layers plays a key role in high-speed and high-extinction operation.
作 者： Takayuki Yamanaka Hideki Fukano Ken Tsuzuki Munehisa Tamura Ryuzo Iga Matsuyuki Ogasawara Yasuhiro Kondo Tadashi Saitoh 作者单位： NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa, 243-0198 JAPAN 刊 名： 光学学报 ISTIC EI PKU 英文刊名： ACTA OPTICA SINICA 年，卷(期)： 2003 23(z1) 分类号： O4 关键词：