Fabrication of 3D structure by combining AFM and chemical etching on crystalline silicon surface
AFM is used for forming silicon dioxide as a layer (nask) on the silicon wafer surface (100) during the cutting process in ambient atmosphere. The silicon dioxide is made through reaction of silicon and oxygen in the atmosphere. As a result of the anisotropic behavior of single crystalline silicon, the etching rates in alkaline solution depend greatly on the various crystal orientations. The anisotropic etching behaviors in KOH solution and reasons of crystalline silicon are described. Effect of etching conditions such as etching temperature and KOH concentration of the alkaline solution on height of the micro-protuberances has been described.
作 者： YUAN Fu-long GUO Yong-feng LIANG Ying-chun LI Li ZHU Yu-jun WANG Yan 作者单位： YUAN Fu-long,LIANG Ying-chun(Precision Engineering Research Institute, Harbin Institute of Technology, Harbin 150001, China)GUO Yong-feng,LI Li,ZHU Yu-jun,WANG Yan(School of Chemistry and Material Science, Heilongjiang University, Harbin 150080, China)
刊 名： 哈尔滨工业大学学报（英文版） EI 英文刊名： JOURNAL OF HARBIN INSTITUTE OF TECHNOLOGY 年，卷(期)： 2006 13(6) 分类号： O643 关键词： atomic force microscope (AFM) micro machining alkaline solution crystalline silicon anisotropy etching