The Fabrication and Characterization of Polarization Insensitive Semiconductor Optical Amplifier
An angled facet strained bulk InGaAs SOA has been designed and fabricated. A device with double-layer antireflection coatings had <2dB polarization sensitivity and <0.5dB gain ripple.
作 者： Lijuan Yu Weihua Guo Chunlin Han Yong-Zhen Huang Xiaoyu Ma Manqing Tan 作者单位： State Key Lab. on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China 刊 名： 光学学报 ISTIC EI PKU 英文刊名： ACTA OPTICA SINICA 年，卷(期)： 2003 23(z1) 分类号： O4 关键词：