Carbon Nitride Films Deposited on Pt Substrates by Microwave Plasma Chemical Vapor Deposition
Carbon nitride thin films have been synthesized on polycryst alline Pt substrates using microwave plasma chemical vapor deposition (MPCVD) technique. The N/C atomic ratio is close to the stoichiometricvalue 1.33 of C3N4. The experimental X-ray diffraction spectra contain all the strong peaks of -C3N4 and -C3N4. The films are a mixture of -C3N4 and -C3N4. The observed Raman and FT-IR spectra support the existence of C? covalent bond in carbon nitride compound. The bulk modulus detected by Nano II nanoindentor is up to 349GPa.
作 者： Yongping Zhang Yousong Gu Xiangrong Chang Zhongzhuo Tian Dongxia Shi Xiufang Zhang Lei Yuan 作者单位： Yongping Zhang,Yousong Gu,Xiangrong Chang,Zhongzhuo Tian(Material Science and Engineering School, University of Science and Technology Beijing, Beijing 100083,China)Dongxia Shi,Xiufang Zhang,Lei Yuan(Beijing Laboratory of Vacuum Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100080,China)
刊 名： 北京科技大学学报（英文版） EI SCI 英文刊名： JOURNAL OF UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING 年，卷(期)： 2000 7(1) 分类号： O6 关键词： carbon nitride MPCVD thin film deposition