Structure and Composition of Crystalline Carbon Nitride Films Synthesized by Microwave Plasma Chemical Vapor Deposition
Crystalline carbon nitride thin films were prepared on Si (100) substrates by a microwave plasma chemical vapor deposition method, using CH4/N2 as precursor gases. The surface morphologies of the carbon nitride films deposited on Si substrate at 830℃ are consisted of hexagonal crystalline rods. The effect of substrate temperature on the formation of carbon nitrides was investigated. X-ray photoelectron spectroscopy analysis indicated that the maximum value of N/C in atomic ratio in the films deposited at a substrate temperature of 830℃ is 1.20, which is close to the stoichiometric value of C3N4. The X-ray diffraction pattern of the films deposited at 830℃ indicates no amorphous phase in the films, which are composed of β- and -C3N4 phase containing an unidentified C-N phase. Fourier transform infrared spectroscopy supports the existence of C-N covalent bond.
作 者： Yongping Zhang Yousong Gu Xiangrong Chang Zhongzhuo Tian Xiufang Zhang 作者单位： Yongping Zhang(Material Science and Engineering School, University of Science and Technology Beijing, Beijing 100083, China;Beijing Laboratory of Vacuum Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China)Yousong Gu,Xiangrong Chang(Material Science and Engineering School, University of Science and Technology Beijing, Beijing 100083, China)
Zhongzhuo Tian,Xiufang Zhang(Beijing Laboratory of Vacuum Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China)
刊 名： 北京科技大学学报（英文版） EI SCI 英文刊名： JOURNAL OF UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING 年，卷(期)： 2000 7(4) 分类号： O6 关键词： carbon nitride microwave plasma chemical vapor deposition thin film