InN-Based III-Nitrides; A New Emerging Material System for Application in Optical Communications
The fact that InN has a direct bandgap of 0.75eV enables InN-based nitrides devices to cover the wavelength range from UV region to 1.8mm, therefore, emerging as a new material system for optical communication applications.
作 者： Ke Xu Akihiko Yoshikawa 作者单位： Ke Xu(Depaerment of Electronics and Mechanical Engineering, Chiba University, Japan;CREST, JST 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan)Akihiko Yoshikawa(Depaerment of Electronics and Mechanical Engineering, Chiba University, Japan;Center for Frontier Electronics and Photonics, Chiba University VBL, Japan;CREST, JST 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan)
刊 名： 光学学报 ISTIC EI PKU 英文刊名： ACTA OPTICA SINICA 年，卷(期)： 2003 23(z1) 分类号： O4 关键词：