Low-Frequency Noise Properties of GaN Schottky Barriers Deposited on Intermediate Temperature Buffer Layers
Flicker noise and deep level transient spectroscopy were used to characterize defect properties of GaN films with different buffer structures. Results indicate improved properties with the use of intermediate temperature buffer layers due to the relaxation of residue strain in the films.
作 者： B. H. Leung W. K. Fong C. Surya L. W. Lu W. K. Ge 作者单位： B. H. Leung,W. K. Fong,C. Surya(Department of Electronic and Information Engineering and Photonics Research Centre The Hong Kong Polytechnic University, Hong Kong)L. W. Lu,W. K. Ge(Laboratory of Semiconductor for Materials Science Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083, China; Department of Physics The Hong Kong University of Science and Technology Clear Water Bay, Hong Kong)
刊 名： 光学学报 ISTIC EI PKU 英文刊名： ACTA OPTICA SINICA 年，卷(期)： 2003 23(z1) 分类号： O4 关键词：