Mid-Infrared Lasers With Low Threshold and Photodetectors
We report the growth, fabrication, and operation of 2.0μm InGaAsSb/AlGaAsSb laser diodes and 8.5μm GaInAs/AlInAs quantum cascade lasers with low threshold current and the latest improvements in the performance of InGaAsSb photodetectors by passivation treatment.
作 者： A. Z. Li H. Li Y. G. Zhang X.Zhang Y. L. Zheng G. Y. Xu M. Qi C. Gmachl M. L. Peabody A. Y. Cho 作者单位： A. Z. Li,H. Li,Y. G. Zhang,X.Zhang,Y. L. Zheng,G. Y. Xu,M. Qi(State Key Laboratory of Functional Materials foe Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences,865 Changning Rd. Shanghai 200050, China)C. Gmachl,M. L. Peabody,A. Y. Cho(Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill,NJ 07974, USA)
刊 名： 光学学报 ISTIC EI PKU 英文刊名： ACTA OPTICA SINICA 年，卷(期)： 2003 23(z1) 分类号： O4 关键词：